Datasheet > 6MBP35XSJ065-50

6MBP35XSJ065-50

更新时间： 2024-03-03 10:07:26

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
17页	1868K
描述
IPM(Inv.+Gate Driver) P633C

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6MBP35XSJ065-50 数据手册

6MBP35XSJ065-50

IGBT Modules

■ Recommend operation conditions(Note*17)

max

400

18.5

16.5

Description

DC bus voltage

High-side bias voltage for IGBT gate driving

High-side supply voltage

Symbol

min.

13.0

13.5

-1

-5

1.5

0.5

0.9

Unit

typ.

300

15.0

V _DC

V _B(*)

V _CCH

V _CCL

ΔV _B

ΔV _CC

V _IN

15.0

Low-side supply voltage

Control supply variation (under swiching conditions)

V/s

s

A rms

s

kHz

°C

Input signal voltage

Voltage for current sensing

Potential difference of between COM to N （including surge)

Dead time for preventing arm-short (T _C125°C)

Output current (Note*14)

V _IS

V _{COM_N}

t _DEAD

I_O

PW _IN(on)

PW _IN(off)

f _PWM

T _vjop

30.0

150

Minimum input pulse widht (Note*15,Note*16)

PWM input frequency

Operating virtual junction temperature

-30

Note

*14 : V_DC=300V, V_CCH=V_CCL=V_B(*)=15V, PF=0.8, Sinusoidal PWM, 3phase modulation, T_vj150C ,T_c100C ,

f_PWM=5kHz, f_O=200Hz, Ks=0.9

*15 : In the pulse width of 0.5us, the loss of IGBT increases for the saturation operation.

To reduce the loss of IGBT, please enlarge the pulse width more than the switching time of IGBT.

*16 : This IPM module might response according to input signal pulse even when the input signal pulse width is

less than PW_IN(on)and PW_IN(off)

*17 : Recommended operating conditions are conditions for guaranteeing that the product operates normally.

If it is used beyond this condition, operation and reliability may be adversely affected.

2076

2023/04

1...4 5 678 9 10...17

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