Datasheet > 5NM70-FD

5NM70-FD

更新时间： 2023-12-06 20:07:40

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友顺 - UTC		/
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描述
N-CH

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5NM70-FD 数据手册

5NM70-FD

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J= 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

V_DS=700V, V_GS=0V

V_GS=30V, V_DS=0V

V_GS=-30V, V_DS=0V

700

2.5

μA

Forward

Reverse

100

-100

Gate-Source Leakage Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

4.5

1.6

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS=10V, I_D=2.5A

Ω

C_ISS

C_OSS

C_RSS

240

130

V_DS=25V, V_GS=0V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

Gate to Source Charge

Gate to Drain Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_DS=50V, V_GS=10V, I_D=1.3A ,

I_G=100µA (Note 1, 2)

Turn-ON Delay Time (Note 1)

Rise Time

136

V_DD=30V, V_GS=10V, I_D=0.5A,

R_G=25Ω (Note 1, 2)

Turn-OFF Delay Time

t_D(OFF)

t_F

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

I_S

I_SM

V_SD

t_rr

5.0

Drain-Source Diode Forward Voltage (Note 1)

Body Diode Reverse Recovery Time (Note 1)

Body Diode Reverse Recovery Charge

I_S=5.0A, V_GS=0V

I_S=5.0A, V_GS=0V,

dI_F/dt=100A/µs

1.4

125

µC

Q_rr

0.51

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

4 of 7

QW-R209-243.a

www.unisonic.com.tw

1 2 345 6 7

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