Datasheet > 5KP17C

5KP17C

更新时间： 2024-01-13 01:31:14

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管
页数	文件大小	规格书
6页	981K
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5KP17C 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 5 kW > 5KP series

Pb e3

RoHS

5KP Series

Description

The 5KP Series is designed speciﬁcally to protect sensitive

electronic equipment from voltage transients induced by

lightning and other transient voltage events.

Uni-directional

Features

Bi-directional

• 5 kW peak pulse

• Typical I_Rless than 2μA

when V_BRmin>12V

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Glass passivated chip

junction in P600 package

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC 61000-4-2 ESD

• High temperature

to reﬂow soldering

guaranteed: 260°C/40sec

/ 0.375”, (9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• UL Recognized compound

meeting ﬂammability

rating V-0

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

Steady State Power Dissipation on

Inﬁnite Heat Sink atT_L=75ºC

P_D

8.0

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

I_FSM

400

30kV(Air), 30kV (Contact) • Pb-free E3 indicates that

2nd level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• Low incremental surge

resistance

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only (Note 3)

V_F

3.5/5.0

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 175

°C

TypicalThermal Resistance

Junction to Lead

R_θJL

R_θJA

8.0

°C/W

TypicalThermal Resistance

Junction to Ambient

Applications

Notes:

TVS componants are ideal for the protection of I/O

interfaces, V_CCbus and other vulnerable circuits used in

telecom, computer, industrial and consumer electronic

applications.

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

Functional Diagram

Additional Infomarion

Bi-directional

Datasꢀeet

Saꢀples

ꢀesourꢁes

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 05/08/18

12 3 4 5 6

中文翻译

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与5KP17C相关器件

型号	品牌	获取价格	描述	数据表
5KP17C/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
5KP17C/23	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
5KP17C/23-E3	VISHAY	获取价格	DIODE 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, P600, 2 PIN, Transient Suppresso
5KP17C/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
5KP17C/4-E3	VISHAY	获取价格	DIODE 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, P600, 2 PIN, Transient Suppresso
5KP17C-13	DIODES	获取价格	Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Bidirectional, 1 Element, Silicon
5KP17C-2	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, Bidirectional, 1 Element, Silicon, PLASTIC, CASE 5,
5KP17C-5AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Bidirectional, 1 Element, Silicon,
5KP17C-5R	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Bidirectional, 1 Element, Silicon
5KP17C-5RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Bidirectional, 1 Element, Silicon,

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