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5KA13AHE3/54 PDF预览

5KA13AHE3/54

更新时间： 2024-01-15 16:02:27
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
5页 81K
描述
DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Transient Suppressor

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5KA13AHE3/54 技术参数

生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.76最大击穿电压：15.9 V
最小击穿电压：14.4 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：5000 W
元件数量：1端子数量：2
最高工作温度：185 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：5.5 W参考标准：AEC-Q101
最大重复峰值反向电压：13 V表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

5KA13AHE3/54 数据手册

 浏览型号5KA13AHE3/54的Datasheet PDF文件第2页浏览型号5KA13AHE3/54的Datasheet PDF文件第3页浏览型号5KA13AHE3/54的Datasheet PDF文件第4页浏览型号5KA13AHE3/54的Datasheet PDF文件第5页 
5KA10 thru 5KA24A  
Vishay General Semiconductor  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design passivated  
anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high reliability  
and automotive requirement  
• Available in uni-directional polarity only  
• Low leakage current  
P600  
• Low forward voltage drop  
• High surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting,  
especially for automotive load dump protection.  
VWM  
PPM (10 x 1000 μs)  
PD  
10 V to 36 V  
P
5000 W  
5.5 W  
MECHANICAL DATA  
IFSM  
400 A  
Case: P600, molded epoxy over passivated junction  
Epoxy meets UL 94 V-0 flammability rating  
TJ max.  
185 °C  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102D  
HE3 suffix for high reliability grade (AEC-Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
minimum 5000  
see next table  
5.5  
UNIT  
W
(1)  
Peak pulse power dissipation with 10/1000 μs waveform  
Peak pulse current with a 10/1000 μs waveform  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (fig. 5)  
Instantaneous forward voltage at 80 A  
PPPM  
(1)  
IPPM  
A
PD  
W
IFSM  
400  
A
(2)  
VF  
1.8  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
Document Number: 88466  
Revision: 09-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
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5KA13HE3/54 VISHAY

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5KA14/4/800 VISHAY

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 		DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KA14/4H VISHAY

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 		DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KA14/54 VISHAY

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 		DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KA14/56 VISHAY

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 		DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KA14/60 VISHAY

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 		DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KA14/64 VISHAY

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 		DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup

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