Datasheet > 5962F0251101QEC

5962F0251101QEC

更新时间： 2024-02-04 23:26:08

品牌	Logo	应用领域
英特矽尔 - INTERSIL		开关信息通信管理
页数	文件大小	规格书
2页	134K
描述
Single Event and Total Dose Hardened, High-Speed, Dual Output PWM

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技术参数
数据手册

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5962F0251101QEC 技术参数

生命周期：	Transferred	零件包装代码：	DFP
包装说明：	DFP,	针数：	20
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5
其他特性：	ALSO CAN BE CONFIGURED IN CURRENT MODE	模拟集成电路 - 其他类型：	SWITCHING CONTROLLER
控制模式：	VOLTAGE-MODE	控制技术：	PULSE WIDTH MODULATION
JESD-30 代码：	R-CDFP-F20	功能数量：	1
端子数量：	20	最高工作温度：	125 °C
最低工作温度：	-50 °C	最大输出电流：	1 A
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	DFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK
认证状态：	Not Qualified	筛选级别：	MIL-PRF-38535
座面最大高度：	2.92 mm	表面贴装：	YES
切换器配置：	PUSH-PULL	最大切换频率：	1000 kHz
技术：	BICMOS	温度等级：	AUTOMOTIVE
端子形式：	FLAT	端子节距：	1.27 mm
端子位置：	DUAL	总剂量：	300k Rad(Si) V
宽度：	6.92 mm

5962F0251101QEC 数据手册

IS-1825ASRH

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Die Characteristics

DIE DIMENSIONS:

4310µm x 5840µm (170 mils x 230 mils)

Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)

Backside Finish:

Silicon

INTERFACE MATERIALS

Glassivation

ASSEMBLY RELATED INFORMATION

Substrate Potential:

Unbiased (DI)

Type: Phosphorus Silicon Glass (PSG)

Thickness: 8.0kA +/- 1.0kA

Top Metallization

Type: AlSiCu

Thickness: 16.0kA +/- 2kA

ADDITIONAL INFORMATION

Worst Case Current Density:

<2.0 x 10 A/cm

Transistor Count:

585

Metallization Mask Layout

IS-1825ASRH

CLK/LEB

E/A OUT

NON-INV

INV

RAMP

ILIM/SD

OGND

VREF

VCC

GND

OUT A

PGND

OUT B

PGND

Notes:

1. Both the OGND (oscillator ground) and the GND (control circuit ground) pads must be bonded to ground.

These pads are both bonded to the GND pin on the packaged devices.

2. All double-sized bond pads must be double bonded for current sharing purposes.

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN9065.1

June 14, 2005

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5962F0251101QXC	INTERSIL	Single Event and Total Dose Hardened, High-Speed, Dual Output PWM	获取价格
5962F0251101V9A	INTERSIL	Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs	获取价格
5962F0251101VEC	INTERSIL	Single Event and Total Dose Hardened, High-Speed, Dual Output PWM	获取价格
5962F0251101VXC	INTERSIL	Single Event and Total Dose Hardened, High-Speed, Dual Output PWM	获取价格
5962F0251102QEC	INTERSIL	Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs	获取价格
5962F0251102QXC	INTERSIL	Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs	获取价格

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