Datasheet > 存储 > EEPROM> 5962-3826707MUC

5962-3826707MUC

更新时间： 2024-02-23 15:05:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
16页	599K
描述
EEPROM, 128KX8, 120ns, Parallel, CMOS, CQCC32

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5962-3826707MUC 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	零件包装代码：	DFP
包装说明：	DFP,	针数：	32
Reach Compliance Code：	compliant	ECCN代码：	3A001.A.2.C
HTS代码：	8542.32.00.51	风险等级：	5.04
Is Samacsys：	N	最长访问时间：	120 ns
其他特性：	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	数据保留时间-最小值：	10
JESD-30 代码：	R-CDFP-F32	JESD-609代码：	e0
长度：	20.85 mm	内存密度：	1048576 bit
内存集成电路类型：	EEPROM	内存宽度：	8
功能数量：	1	端子数量：	32
字数：	131072 words	字数代码：	128000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	128KX8
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	DFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	240
编程电压：	5 V	认证状态：	Not Qualified
筛选级别：	MIL-STD-883	座面最大高度：	3.05 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	FLAT
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	宽度：	12.2 mm
最长写入周期时间 (tWC)：	10 ms	Base Number Matches：	1

5962-3826707MUC 数据手册

Description

The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Mem-

ory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with

power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is

less than 300 μA.

The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for

external components. The device contains a 128-byte page register to allow writing of up to 128-

bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally

latched, freeing the address and data bus for other operations. Following the initiation of a write

cycle, the device will automatically write the latched data using an internal control timer. The end

of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has

been detected a new access for a read or write can begin.

Atmel's 28C010 has additional features to ensure high quality and manufacturability. The device

utilizes internal error correction for extended endurance and improved data retention character-

istics. An optional software data protection mechanism is available to guard against inadvertent

writes. The device also includes an extra 128-bytes of EEPROM for device identification or

tracking.

Block Diagram

Absolute Maximum Ratings*

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

device reliability.

Temperature Under Bias................................ -55°C to +125°C

Storage Temperature..................................... -65°C to +150°C

All Input Voltages

(including NC Pins)

with Respect to Ground...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground.............................-0.6V to V_CC+ 0.6V

Voltage on OE and A9

with Respect to Ground...................................-0.6V to +13.5V

AT28C010 Military

0010D–PEEPR–7/09

123 4 5 6 7...16

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与5962-3826707MUC相关器件

型号	品牌	描述	获取价格	数据表
5962-3826707MUM	MAXWELL	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON	获取价格
5962-3826707MUQ	MAXWELL	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON	获取价格
5962-3826707MUV	MAXWELL	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON	获取价格
5962-3826707MWC	XICOR	EEPROM, 128KX8, 120ns, Parallel, CMOS, CPGA36, CERAMIC, PGA-36	获取价格
5962-3826707MWM	MAXWELL	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON	获取价格
5962-3826707MWQ	MAXWELL	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON	获取价格

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