5秒后页面跳转
530HC113M000DGR PDF预览

530HC113M000DGR

更新时间: 2024-02-24 23:04:18
品牌 Logo 应用领域
芯科 - SILICON 机械振荡器
页数 文件大小 规格书
12页 111K
描述
CMOS/TTL Output Clock Oscillator, 113MHz Nom, ROHS COMPLIANT, SMD, 6 PIN

530HC113M000DGR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.57其他特性:TAPE AND REEL
最长下降时间:0.35 ns频率调整-机械:NO
频率稳定性:7%JESD-609代码:e4
安装特点:SURFACE MOUNT标称工作频率:113 MHz
最高工作温度:85 °C最低工作温度:-40 °C
振荡器类型:CMOS/TTL物理尺寸:7.0mm x 5.0mm x 1.85mm
最长上升时间:0.35 ns最大供电电压:2.75 V
最小供电电压:2.25 V标称供电电压:2.5 V
表面贴装:YES最大对称度:55/45 %
端子面层:Nickel/Gold (Ni/Au)Base Number Matches:1

530HC113M000DGR 数据手册

 浏览型号530HC113M000DGR的Datasheet PDF文件第1页浏览型号530HC113M000DGR的Datasheet PDF文件第2页浏览型号530HC113M000DGR的Datasheet PDF文件第4页浏览型号530HC113M000DGR的Datasheet PDF文件第5页浏览型号530HC113M000DGR的Datasheet PDF文件第6页浏览型号530HC113M000DGR的Datasheet PDF文件第7页 
Si530/531  
Table 2. CLK± Output Frequency Characteristics (Continued)  
Parameter  
Total Stability  
Symbol  
Test Condition  
Min  
Typ  
Max  
±20  
Units  
ppm  
ppm  
ppm  
ms  
Temp stability = ±7 ppm  
Temp stability = ±20 ppm  
Temp stability = ±50 ppm  
±31.5  
±61.5  
10  
Powerup Time4  
tOSC  
Notes:  
1. See Section 3. "Ordering Information" on page 7 for further details.  
2. Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.  
3. Selectable parameter specified by part number.  
4. Time from powerup or tristate mode to fO.  
Table 3. CLK± Output Levels and Symmetry  
Parameter  
Symbol  
Test Condition  
mid-level  
Min  
VDD – 1.42  
1.1  
Typ  
Max  
VDD – 1.25  
1.9  
Units  
V
LVPECL Output Option1  
V
O
VOD  
VSE  
swing (diff)  
VPP  
VPP  
swing (single-ended)  
mid-level  
0.55  
0.95  
LVDS Output Option2  
CML Output Option2  
V
1.125  
1.20  
1.275  
V
O
swing (diff)  
VOD  
VO  
0.5  
0.7  
0.9  
VPP  
V
2.5/3.3 V option mid-level  
1.8 V option mid-level  
V
V
– 1.30  
DD  
– 0.36  
V
DD  
2.5/3.3 V option swing (diff)  
1.8 V option swing (diff)  
1.10  
0.35  
0.8 x VDD  
1.50  
1.90  
0.50  
VDD  
0.4  
350  
VPP  
VPP  
V
VOD  
0.425  
CMOS Output Option3  
Rise/Fall time (20/80%)  
Symmetry (duty cycle)  
VOH  
VOL  
I
= 32 mA  
OH  
IOL = 32 mA  
V
tR, tF  
LVPECL/LVDS/CML  
ps  
ns  
CMOS with C = 15 pF  
1
L
LVPECL:  
VDD – 1.3 V  
SYM  
(diff)  
LVDS:  
CMOS:  
45  
55  
%
1.25 V (diff)  
VDD/2  
Notes:  
1. 50 to VDD – 2.0 V.  
2. Rterm = 100 (differential).  
3. CL = 15 pF  
Rev. 1.2  
3

与530HC113M000DGR相关器件

型号 品牌 描述 获取价格 数据表
530HC114M000DG SILICON CMOS/TTL Output Clock Oscillator, 114MHz Nom, ROHS COMPLIANT, SMD, 6 PIN

获取价格

530HC114M285DG SILICON XO, Clock, 10MHz Min, 945MHz Max, 114.285MHz Nom

获取价格

530HC114M285DGR SILICON XO, Clock, 10MHz Min, 945MHz Max, 114.285MHz Nom

获取价格

530HC116M000DGR SILICON CMOS/TTL Output Clock Oscillator, 116MHz Nom, ROHS COMPLIANT, SMD, 6 PIN

获取价格

530HC119M000DG SILICON CMOS/TTL Output Clock Oscillator, 119MHz Nom, ROHS COMPLIANT, SMD, 6 PIN

获取价格

530HC11M0000DG SILICON CMOS/TTL Output Clock Oscillator, 11MHz Nom, ROHS COMPLIANT, SMD, 6 PIN

获取价格