Datasheet > 5.0SMDJ54

5.0SMDJ54

更新时间： 2024-02-18 15:42:34

品牌	Logo	应用领域
森美特 - SUNMATE		局域网光电二极管
页数	文件大小	规格书
4页	839K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODES

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技术参数
数据手册

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5.0SMDJ54 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.68
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：	NOT SPECIFIED

5.0SMDJ54 数据手册

5.0SMDJ11A(CA) - 5.0SMDJ440A(CA)

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODES

VOLTAGE RANGE: 11 - 440V

POWER: 5000Wa t t s

Features

For surface mount application

Built-in strain relief

Excellent clamping capability

Low profile package

Fast response time: Typically less than

1.0ps from 0 volt to BV min.

Typical IR less than 1 A above 10V

SMC/DO-214AB

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

Mechanical Data

Case:DO-214AB(SMC)

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Terminals: Lead Free Plating (Matte Tin Finish).

Solderable per MIL-STD-202, Method 208

Marking: Date Code and Marking Code

See Page 2

Weight: 0.21 grams (approximate)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

RATINGS

SYMBOL

VALUE

UNITS

Peak Power Dissipation at TA=25 C, TP=1ms(NOTE 1)

PPK

Minimum 5000

6.5

Watts

Power Dissipation on infinite heatsink at TL=75 C

Peak Forward Surge Current at 8.3ms Single Half Sine-Wave

superimposed on rated load (JEDEC method) (NOTE 3)

IFSM

300

Amps

Maximum Instantenous Forward Voltage at 100A for

Unidirectional only

3.5/5.0

Volts

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

NOTES:

1. Non-repetitive current pulse per Fig. 3 and derated above TA=25 C per Fig. 2.

2. 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum.

3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.

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