Datasheet > 4N35M

4N35M

更新时间： 2024-02-03 13:03:51

品牌	Logo	应用领域
安森美 - ONSEMI		输出元件晶体管光电晶体管
页数	文件大小	规格书
12页	330K
描述
6 引脚 DIP 封装光电晶体管输出光耦合器

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数据手册

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4N35M 数据手册

4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Max

Unit

TOTAL DEVICE

Storage Temperature

Operating Temperature

Junction Temperature

Lead Solder Temperature

−40 to +125

−40 to +100

−40 to +125

260 for 10 seconds

270

°C

STG

OPR

°C

SOL

Total Device Power Dissipation @ T = 25°C

mW/°C

Derate Above 25°C

2.94

EMITTER

DC / Average Forward Input Current

Reverse Input Voltage

(pk)

Forward Current – Peak (300 ꢁ s, 2% Duty Cycle)

LED Power Dissipation @ T = 25°C

120

1.41

mW/°C

Derate Above 25°C

DETECTOR

CEO

CBO

ECO

Collector−to−Emitter Voltage

Collector−to−Base Voltage

Emitter−to−Collector Voltage

Detector Power Dissipation @ T = 25°C

150

1.76

mW/°C

Derate Above 25°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

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