Datasheet > 4N35M

4N35M

更新时间： 2024-02-02 00:40:07

品牌	Logo	应用领域
安森美 - ONSEMI		输出元件晶体管光电晶体管
页数	文件大小	规格书
12页	330K
描述
6 引脚 DIP 封装光电晶体管输出光耦合器

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数据手册

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4N35M 数据手册

4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M

REFLOW PROFILE

Max. Ramp−up Rate = 3°C/S

Max. Ramp−down Rate = 6°C/S

T_P

T_L

260

t_P

240

220

200

180

160

140

120

100

Tsmax

t_L

Preheat Area

Tsmin

t_s

120

240

360

Time 25°C to Peak

Time (s)

Profile Feature

Pb−Free Assembly Profile

150°C

200°C

Temperature Min. (Tsmin)

Temperature Max. (Tsmax)

Time (t _S) from (Tsmin to Tsmax)

60–120 seconds

3°C/second max.

217°C

Ramp−up Rate (t _Lto t_P

)

Liquidous Temperature (T_L)

Time (t _L) Maintained Above (T_L)

Peak Body Package Temperature

60–150 seconds

260°C +0°C / –5°C

30 seconds

) within 5°C of 260°C

Time (t _P

6°C/second max.

Ramp−down Rate (T_Pto T_L)

Time 25°C to Peak Temperature

8 minutes max.

Figure 12. Reflow Profile

www.onsemi.com

1...4 5 678 9 10...12

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