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4N33TVM PDF预览

4N33TVM

更新时间: 2024-01-02 12:21:54
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 输出元件光电
页数 文件大小 规格书
10页 270K
描述
Darlington Output Optocoupler, 1-Element, 7500V Isolation, DIP-6

4N33TVM 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:DIP-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.40.80.00
Factory Lead Time:5 weeks风险等级:1.11
其他特性:UL APPROVED, VDE APPROVEDColl-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE当前传输比率-最小值:500%
最大暗电源:100 nA最大正向电流:0.08 A
最大正向电压:1.5 V最大绝缘电压:4170 V
JESD-609代码:e3安装特点:THROUGH HOLE MOUNT
元件数量:1最大通态电流:0.15 A
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:DARLINGTON OUTPUT OPTOCOUPLER包装方法:TUBE
最大功率耗散:0.15 W最长响应时间:0.000005 s
子类别:Optocoupler - Transistor Outputs表面贴装:NO
端子面层:Tin (Sn)Base Number Matches:1

4N33TVM 数据手册

 浏览型号4N33TVM的Datasheet PDF文件第1页浏览型号4N33TVM的Datasheet PDF文件第3页浏览型号4N33TVM的Datasheet PDF文件第4页浏览型号4N33TVM的Datasheet PDF文件第5页浏览型号4N33TVM的Datasheet PDF文件第6页浏览型号4N33TVM的Datasheet PDF文件第7页 
Absolute Maximum Ratings (T = 25°C unless otherwise specified.)  
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute  
maximum ratings are stress ratings only.  
Symbol  
Parameter  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
-50 to +150  
-40 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
OPR  
T
Lead Solder Temperature (Wave)  
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
mW/°C  
D
A
Derate above 25°C  
3.3  
EMITTER  
I
Continuous Forward Current  
Reverse Voltage  
80  
3
mA  
V
F
V
R
I (pk)  
Forward Current – Peak (300µs, 2% Duty Cycle)  
3.0  
150  
2.0  
A
F
P
LED Power Dissipation @ T = 25°C  
mW  
mW/°C  
D
A
Derate above 25°C  
DETECTOR  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
30  
30  
V
V
CEO  
CBO  
ECO  
5
V
P
Detector Power Dissipation @ T = 25°C  
150  
2.0  
150  
mW  
mW/°C  
mA  
D
A
Derate above 25°C  
I
Continuous Collector Current  
C
©2007 Fairchild Semiconductor Corporation  
4NXXM, H11B1M, TIL113M Rev. 1.0.3  
www.fairchildsemi.com  
2

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