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4N33SVM PDF预览

4N33SVM

更新时间: 2024-01-15 17:45:19
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飞兆/仙童 - FAIRCHILD 光电输出元件
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4N33SVM 数据手册

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Electrical Characteristics (T = 25°C Unless otherwise specified.)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
Input Forward Voltage*  
Reverse Leakage Current*  
Capacitance*  
I = 10mA  
1.2  
0.001  
150  
1.5  
100  
V
F
F
I
V = 3.0V  
µA  
pF  
R
R
C
V = 0V, f = 1.0MHz  
F
DETECTOR  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage* I = 1.0mA, I = 0  
30  
30  
5.0  
60  
100  
8
V
V
CEO  
CBO  
ECO  
C
B
Collector-Base Breakdown Voltage*  
I = 100µA, I = 0  
C E  
Emitter-Collector Breakdown Voltage* I = 100µA, I = 0  
V
E
B
I
Collector-Emitter Dark Current*  
DC Current Gain  
V
= 10V, Base Open  
1
100  
nA  
CEO  
CE  
CE  
h
V
= 5.0V, I = 500µA  
5000  
FE  
C
Transfer Characteristics  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
DC CHARACTERISTICS  
(1, 2)  
I
Collector Output Current*  
4N32, 4N33  
I = 10mA, V = 10V, I = 0  
F CE B  
C(CTR)  
50 (500)  
10 (100)  
5 (50)  
mA (%)  
4N29, 4N30  
4N31  
(2)  
V
Saturation Voltage*  
I = 8mA, I = 2.0mA  
F C  
CE(SAT)  
4N29, 4N30, 4N32, 4N33  
4N31  
1.0  
1.2  
V
AC CHARACTERISTICS  
t
Turn-on Time  
I = 200mA, I = 50mA,  
5.0  
µS  
on  
F
C
V
= 10V  
CC  
t
Turn-off Time  
off  
4N32, 4N33  
I = 200mA, I = 50mA,  
100  
40  
µS  
F
C
V
= 10V  
CC  
4N29, 4N30, 4N31  
(3, 4)  
BW  
30  
kHz  
Bandwidth  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min.  
Typ. Max.  
Units  
(5)  
V
Input-Output Isolation Voltage  
ISO  
4N29, 4N30, 4N31, 4N32, 4N33  
I
1µA, Vrms, t = 1min.  
5300  
2500  
1500  
Vac(rms)  
V
I-O  
4N32*  
4N33*  
VDC  
VDC  
(5)  
11  
R
C
Isolation Resistance  
V
= 500VDC  
10  
0.8  
ISO  
I-O  
(5)  
Isolation Capacitance  
V
= Ø, f = 1MHz  
pF  
ISO  
I-O  
Notes:  
* Indicates JEDEC registered data.  
1. The current transfer ratio(I /I ) is the ratio of the detector collector current to the LED input current with V @ 10V.  
C F  
CE  
2. Pulse test: pulse width = 300µs, duty cycle 2.0% .  
4. I adjusted to I = 2.0mA and I = 0.7mA rms.  
F
C
C
5. The frequency at which I is 3dB down from the 1kHz value.  
C
6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.  
©2006 Fairchild Semiconductor Corporation  
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1  
www.fairchildsemi.com  
3

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