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4N33SR2VM PDF预览

4N33SR2VM

更新时间: 2024-01-15 13:25:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电输出元件
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10页 281K
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4N33SR2VM 数据手册

 浏览型号4N33SR2VM的Datasheet PDF文件第1页浏览型号4N33SR2VM的Datasheet PDF文件第3页浏览型号4N33SR2VM的Datasheet PDF文件第4页浏览型号4N33SR2VM的Datasheet PDF文件第5页浏览型号4N33SR2VM的Datasheet PDF文件第6页浏览型号4N33SR2VM的Datasheet PDF文件第7页 
Absolute Maximum Ratings (T = 25°C unless otherwise specified.)  
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute  
maximum ratings are stress ratings only.  
Symbol  
Parameter  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
-50 to +150  
-40 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
OPR  
T
Lead Solder Temperature (Wave)  
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
mW/°C  
D
A
Derate above 25°C  
3.3  
EMITTER  
I
Continuous Forward Current  
Reverse Voltage  
80  
3
mA  
V
F
V
R
I (pk)  
Forward Current – Peak (300µs, 2% Duty Cycle)  
3.0  
150  
2.0  
A
F
P
LED Power Dissipation @ T = 25°C  
mW  
mW/°C  
D
A
Derate above 25°C  
DETECTOR  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
30  
30  
V
V
CEO  
CBO  
ECO  
5
V
P
Detector Power Dissipation @ T = 25°C  
150  
2.0  
150  
mW  
mW/°C  
mA  
D
A
Derate above 25°C  
I
Continuous Collector Current  
C
©2007 Fairchild Semiconductor Corporation  
4NXXM, H11B1M, TIL113M Rev. 1.0.3  
www.fairchildsemi.com  
2

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