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4M3002-K PDF预览

4M3002-K

更新时间: 2024-10-01 06:50:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 121K
描述
Temperature Dependent Resistor, RESISTOR, TEMPERATURE DEPENDENT, NTC, 30000 ohm, THROUGH HOLE MOUNT

4M3002-K 数据手册

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RMKHT (CNHT)  
www.vishay.com  
Vishay Sfernice  
High Temperature (230 °C) Wirebondable Thin Film Chip Resistors  
and Resistor Networks  
FEATURES  
• Operating temperature range: - 55 °C; + 215 °C  
• Storage temperature: - 55 °C; + 230 °C  
• Wirebondable (aluminum pads)  
• Aluminum or gold pads  
• Large selection of sizes available  
• Custom networks available on request (CNHT)  
• Temperature coefficient down to 15 ppm/°C  
(- 55 °C; + 215 °C)  
INTRODUCTION  
For applications such as down hole applications, the need  
for parts able to withstand very severe conditions  
(temperature as high as 215 °C powered or up to 230 °C  
• Tolerance down to 0.05 %  
• Temperature coefficient remains at 15 ppm/°C after long  
term storage at 230 °C  
un-powered) has leaded Vishay Sfernice to push out the  
limit of the thin film technology.  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
Designers might read the application note “Power  
Dissipation Considerations in High Precision Vishay  
Sfernice Thin Film Chip Resistors and Arrays  
(P, PRA, etc…) (High Temperature Application)  
www.vishay.com/doc?53047 in conjunction with this  
datasheet to help them to properly design their PCBs and  
get the best performances of the RMKHT.  
TYPICAL PERFORMANCE  
ABS  
25 ppm/°C  
ABS  
TRACKING (1)  
2 ppm/°C  
RATIO (1)  
0.02 %  
TCR  
TOL.  
0.05 %  
Note  
Vishay Sfernice research and development engineers will  
be willing to support any customer design considerations.  
(1)  
When applicable (networks only)  
MECHANICAL SPECIFICATIONS  
Resistive element  
Nichrome (NiCr)  
Silicon (size 22, 33, 55, 515) - alumina (other sizes)  
Aluminum (Al) or gold (Au)  
Substrate material  
Bonding pads  
Passivation  
Silicon nitride (Si3N4)  
Back metallization (2)  
Gold on nickel barrier  
Note  
(2)  
When applicable (only on alumina substrate)  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
With Pd (Tj = 230 °C)  
T = 185 °C  
T = 200 °C  
T = 215 °C  
T = 230 °C  
0
2000  
4000  
6000  
8000  
t (h)  
10 000  
12 000  
14 000  
Note  
TCR (- 55 °C; + 215 °C) remains unchanged after 15 000 h storage  
Revision: 26-Mar-13  
Document Number: 60075  
1
For technical questions, contact: sferthinfilm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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