Datasheet > 414H4

414H4

更新时间： 2024-09-29 23:21:23

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
2页	39K
描述
Infrared Emitting Diodes (IRED)

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中文翻译

获取价格

数据手册

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414H4 数据手册

Unity Opto Technology Co., Ltd.

MIE-404H4

MIE-414H4

Features

Package Dimensions

：

Package：TO-46 (4.7mm) package with water clear epoxy

Feature of the device：

Ultra-high radiant incidence

High response speed

High modulation bandwidth

Wavelength：850 nm

Technology：GaAlAs

Applications

Free air transmission systems with high-speed response

SIR

Absolute Maximum Tatings

Parameter

Power Dissipation

Maximum Rating

Unit

NOTES :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 0.79 mm (.031'') max.

3. Lead spacing is measured where the leads emerge from the pack

120

Peak Forward Current (300pps, 10ms pulse)

Continuous Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Optical -Electrical Characteristics

Parameter

Test Conditions

Symbol

Min.

Typ.

4.0

2.4

1.5

Max.

Unit

404H4

I_F=20mA

Radiant Intensity

mW/sr

414H4

I_F=50mA

V_R=5V

V_F

I_R

Forward Voltage

Reverse Current

Peak Wavelength

Spectral Bandwidth

1.8

100

I_F=20mA

850

l p

404H4

414H4

I_F=20mA

2q_1/2

View Angle

deg.

中文翻译

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