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3KP210CA PDF预览

3KP210CA

更新时间: 2024-02-29 08:21:36
品牌 Logo 应用领域
东沃 - dowosemi 二极管局域网
页数 文件大小 规格书
4页 712K
描述
瞬态电压抑制二极管 Transient Voltage Suppressor Diodes

3KP210CA 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.68其他特性:EXCELLENT CLAMPING CAPABILITY
最大击穿电压:263 V最小击穿电压:237 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2最大非重复峰值反向功率耗散:3000 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:BIDIRECTIONAL
最大功率耗散:6.5 W最大重复峰值反向电压:210 V
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

3KP210CA 数据手册

 浏览型号3KP210CA的Datasheet PDF文件第2页浏览型号3KP210CA的Datasheet PDF文件第3页浏览型号3KP210CA的Datasheet PDF文件第4页 
东沃电子  
DOWOSEMI  
3KP Series  
Reverse Voltage: 5.0 to 440 V  
Peak Pulse Power: 3000 W  
Axial Lead  
Transient Voltage Suppressors  
R-6/P600  
Features  
Glass passivated chip  
3000 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle):0.01 %  
DIA.  
1.000 [25.40]  
0.052 1.32  
MIN  
Low leakage  
0.048  
[ ]  
1.22  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
0.360 9.14  
0.340 8.64  
[
]
Mechanical Data  
Case: Molded plastic  
DIA.  
0.360 9.14  
0.340 8.64  
Epoxy: UL 94V-0 rate flame retardant  
[
]
Lead: Solderable per MIL-STD-202, method  
208 guranteed  
1.000 [25.40]  
MIN  
Polarity: Color band denotes cathode end  
except Bipolar  
Dimensions :  
inch [ mm ]  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
UNIT  
W
Parameter  
Symbol  
Peak power dissipation with a 10/1000μs waveform(1)  
PPP  
3000  
See Next Table  
6.5  
Peak pulse current wih a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
A
W
IFSM  
300  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 100 A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
TEL:0571-87006810  
www.dowosemi.com  
Page 1  

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