Datasheet > 3EZ110

3EZ110

更新时间： 2024-02-29 04:28:19

品牌	Logo	应用领域
TRSYS		稳压二极管测试
页数	文件大小	规格书
5页	284K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

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中文翻译

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数据手册

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3EZ110 数据手册

3EZ11 THRU 3EZ200

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts

FEATURES

DO-15

Low profile package

Built-in strain relief

Glass passivated junction

Low inductance

Excellent clamping capability

Typical I_Dless than 1 A above 11V

High temperature soldering :

260 /10 seconds at terminals

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

MECHANICAL DATA

Case: JEDEC DO-15, Molded plastic over passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

method 2026

Polarity: Color band denotes positive end (cathode)

Standard Packaging: 52mm tape

Weight: 0.015 ounce, 0.04 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_D

VALUE

UNITS

Watts

mW/

Peak Pulse Power Dissipation (Note A)

Derate above 75

Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated

load(JEDEC Method) (Note B)

I_FSM

Amps

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

NOTES:

A. Mounted on 5.0mm²(.013mm thick) land areas.

B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses

per minute maximum.

12 3 4 5

中文翻译

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