Datasheet > 3EZ110

3EZ110

更新时间： 2024-01-29 23:37:30

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管测试
页数	文件大小	规格书
4页	462K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)

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3EZ110 数据手册

DATA SHEET

3EZ11~3EZ200

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

VOLTAGE- 11 to 200 Volts Power - 3.0 Watts

DO-15

Unit: inch ( mm )

FEATURES

.034(.86)

.028(.71)

• Low profile package

• Built-in strain relief

• Glass passivated iunction

• Low inductance

• Typical I_Dless than 1.0µA above 11V

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

• High temperature soldering : 260°C /10 seconds at terminals

MECHANICALDATA

.140(3.6)

.104(2.6)

Case: JEDEC DO-15, Molded plastic over passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes positive end (cathode)

Standard packing: 52mm tape

Weight: 0.015 ounce, 0.04 gram

MAXIMUM5RATINGSANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

VALUE

UNITS

3.0

Watts

Pwak Pulse Power Dissipation on TA=50°C (Notes A)

Derate above 70°C

24.0

mW / °C

Peak Forward Surge Current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

Amps

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

NOTES:

A.Mounted on 5.0mm2 (.013mm thick) land areas.

B.Measured on8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum

PAGE . 1

DATE : OCT.11.2002

12 3 4

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