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37LV128-TISN PDF预览

37LV128-TISN

更新时间: 2024-02-14 07:27:27
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器时钟
页数 文件大小 规格书
12页 92K
描述
36K, 64K, and 128K Serial EPROM Family

37LV128-TISN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.91最大时钟频率 (fCLK):10 MHz
I/O 类型:COMMONJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.9 mm
内存密度:131072 bit内存集成电路类型:OTP ROM
内存宽度:32功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4KX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:3.3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm最大待机电流:0.00005 A
子类别:Other Memory ICs最大压摆率:0.01 mA
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.6 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

37LV128-TISN 数据手册

 浏览型号37LV128-TISN的Datasheet PDF文件第6页浏览型号37LV128-TISN的Datasheet PDF文件第7页浏览型号37LV128-TISN的Datasheet PDF文件第8页浏览型号37LV128-TISN的Datasheet PDF文件第9页浏览型号37LV128-TISN的Datasheet PDF文件第10页浏览型号37LV128-TISN的Datasheet PDF文件第11页 
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