32C408BRPFI-20

更新时间： 2024-01-12 07:59:11

品牌	Logo	应用领域
麦斯威 - MAXWELL		静态存储器
页数	文件大小	规格书
11页	180K
描述
4 Megabit (512K x 8-Bit) SRAM

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32C408BRPFI-20 数据手册

32C408B

4 Megabit (512K x 8-Bit) SRAM

TABLE 1. 32C408B ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

MIN

MAX

UNIT

Voltage on any pin relative to V

V , V

-0.5

V +0.5

IN OUT

Voltage on V_CCsupply relative to V

7.0

1.0

Power Dissipation

P_D

T_S

^°C

Storage Temperature

Operating Temperature

-65

-55

+150

+125

TABLE 2. 32C408B RECOMMENDED OPERATING CONDITIONS

PARAMETER

SYMBOL

MIN

MAX

UNIT

Supply Voltage

Ground

4.5

5.5

Input High Voltage ¹

Input Low Voltage ²

Thermal Impedance

2.2

-0.5

V +0.5

0.8

Θ_JC

0.63

°C/W

1. V (max) = V_CC+ 2.0V ac(pulse width < 10ns) for I < 20mA.

2. V (min) = -2.0V ac(pulse width < 10ns) for I < 20mA.

TABLE 3. 32C408B DC ELECTRICAL CHARACTERISTICS

(V =5V +/- 10%, T = -55 TO +1‘25C, UNLESS OTERWISE SPECIFIED

PARAMETER

CONDITION

SYMBOL

SUBGROUPS

MIN

TYP

MAX

UNIT

Input Leakage Current

Output Leakage Current

V = V to V

I_LI

1, 2, 3

-2

µA

CS=V or OE=V or WE=V ,

I_LO

_OUT=V to V

SS CC

Output Low Voltage

Output High Voltage

I_OL= 8mA

1, 2, 3

0.4

I_OH= -4mA

2.4

Average Operating Cur- Min cycle, 100% Duty, CS=V ,

I_CC

rent

-20

-25

-30

_OUT=0mA, V = V or V

180

170

160

Standby Power Supply CS = V

I_SB

1, 2, 3

Current

f = 0MHz, CS > V_CC- 02V, V >

I_SB1

_CC- 0.2V or V < 0.2V

Input Capacitance¹

V = 0V, f = 1MHz, T_A= 25 °C.

C_IN

1, 2, 3

Output Capacitance¹

V = 0V

C_I/O

I/O

1. Guaranteed by Design

05.02.02 Rev 7

All data sheets are subject to change without notice

123 4 5 6 7...11

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