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32C408BRPFE-18 PDF预览

32C408BRPFE-18

更新时间: 2024-02-15 12:53:12
品牌 Logo 应用领域
麦斯威 - MAXWELL 静态存储器内存集成电路
页数 文件大小 规格书
10页 173K
描述
Standard SRAM, 512KX8, 20ns, CMOS, RAD PAK, LDFP-36

32C408BRPFE-18 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:36
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:20 nsJESD-30 代码:R-XDFP-F36
长度:23.622 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:36
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:512KX8
封装主体材料:UNSPECIFIED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3.7592 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
总剂量:100k Rad(Si) V宽度:16.383 mm
Base Number Matches:1

32C408BRPFE-18 数据手册

 浏览型号32C408BRPFE-18的Datasheet PDF文件第4页浏览型号32C408BRPFE-18的Datasheet PDF文件第5页浏览型号32C408BRPFE-18的Datasheet PDF文件第6页浏览型号32C408BRPFE-18的Datasheet PDF文件第8页浏览型号32C408BRPFE-18的Datasheet PDF文件第9页浏览型号32C408BRPFE-18的Datasheet PDF文件第10页 
32C408B  
4 Megabit (512K x 8-Bit) SRAM  
(2)  
FIGURE 4. TIMING WAVEFORM OF READ CYCLE (WE = VIH)  
1. WE is high for read cycle.  
2. All read cycle timing is referenced from the last valid address to the first transition address.  
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or  
OL levels.  
V
4. At any given temperature and voltage condition, tHZ(max) is less than tLZ(min) both for a given device and from device to device.  
5. Transition is measured +200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.  
6. Device is continuously selected with CS = VIL.  
7. Address valid prior to coincident with CS transition low.  
8. For common I/O applications, minimization or elimination of bus contention is necessary during read and  
write cycle.  
FIGURE 5. SRAM HEAVY ION CROSS SECTION  
1000559  
12.19.01 Rev 6  
All data sheets are subject to change without notice  
7
©2001 Maxwell Technologies  
All rights reserved.  

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