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30KPA258A-HR PDF预览

30KPA258A-HR

更新时间: 2024-09-29 21:11:47
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
7页 1017K
描述
Trans Voltage Suppressor Diode, 30000W, 258V V(RWM), Unidirectional, 1 Element, Silicon,

30KPA258A-HR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.71其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压:317.02 V最小击穿电压:288.2 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:30000 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:8 W
参考标准:IEC-61000-4-2; IEC-61000-4-4最大重复峰值反向电压:258 V
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIALBase Number Matches:1

30KPA258A-HR 数据手册

 浏览型号30KPA258A-HR的Datasheet PDF文件第2页浏览型号30KPA258A-HR的Datasheet PDF文件第3页浏览型号30KPA258A-HR的Datasheet PDF文件第4页浏览型号30KPA258A-HR的Datasheet PDF文件第5页浏览型号30KPA258A-HR的Datasheet PDF文件第6页浏览型号30KPA258A-HR的Datasheet PDF文件第7页 
TVS Diodes  
Axial Leaded – 30000W > 30KPA-HR series  
Pb e3  
RoHS  
30KPA-HR Series  
Descriptios  
The 30KPA-HR High Reliability Series is designed  
Uni-directional  
specifically to protect sensitive electronic equipment from  
voltage transients induced by lightning and other transient  
voltage events.  
Features  
Bi-directional  
• 30000W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Glass passivated chip  
junction in P600 package  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
• Excellent clamping  
capability  
Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Typical IR less than 2μA  
when VBR min>73V  
• High temperature  
soldering guaranteed:  
260C/10 seconds / 0.375,  
(9.5mm) lead length, 5  
lbs., (2.3kg) tension  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Plastic package is  
flammability rated V-0 per  
Underwriters Laboratories  
• Lead-free matte tin plated  
package  
• Halogen free and RoHS  
compliant  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Maximum Ratings and Thermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
30000  
30kV(Air), 30kV (Contact)  
• Pb-free E3 means 2nd  
level interconnect is Pb-  
free and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC  
PD  
8.0  
W
A
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
IFSM  
400  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 175  
°C  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
8.0  
40  
°C/W  
°C/W  
• Low incremental surge  
resistance  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. For RTCA/DO-160G testing results, please see tables in the last section of this  
Notes:  
datasheet  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
Applications  
TVS devices are ideal for the protection of I/O interfaces,  
VCC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
Functional Diagram  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2016 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/10/16  

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