Datasheet > 30KP110SA

30KP110SA

更新时间： 2024-02-25 21:59:01

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
3页	144K
描述
Glass passivated junction chip

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技术参数
数据手册

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30KP110SA 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.76
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

30KP110SA 数据手册

30KP33S,SC SERIES

30K Watts TVS Diodes

VR : 33 - 400 Volts

P^PK: 30,000 Watts

Features

DO-204AR

Glass passivated junction chip

Excellent Clamping Capability

Fast Response Time

Low Leakage Current

Pb / RoHS Free

1.00 (25.4)

0.251 (6.40)

MIN.

0.244 (6.20)

0.368 (9.35)

0.364 (9.25)

Mechanical Data

Case : molded plastic

1.00 (25.4)

Epoxy : UL94V-O rate flame retardant

Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

0.051 (1.30)

MIN.

0.047 (1.20)

Polarity : Color band denotes cathode end

Mounting position : Any

Weight : 1.40 grams (approximate)

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS (Ta = 25 °C)

Rating

Symbol

Value

30,000

Unit

P_PK

Peak Pulse Power Dissipation (10 x 1000μs, see Fig.1 )

Steady State Power Dissipation

P_D

Peak Forward Surge Current, 8.3ms Single Half Sine Wave

(Uni-directional devices only)

I_FSM

250

T_J, T_STG

Operating and Storage Temperature Range

- 65 to + 150

°C

Fig. 1 - Pulse Wave Form

Test Waveform

Paramiters

tr = 10 μs

100

Peak Value - IPP

tp = 1000 μs

Half Value - IPP

10x1000 μs Waveform

T, TIME(ms)

http://www.luguang.cn

mail:lge@luguang.cn

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