Datasheet > 30KP102A

30KP102A

更新时间： 2024-01-18 06:46:41

品牌	Logo	应用领域
MDE		二极管局域网
页数	文件大小	规格书
3页	26K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

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技术参数
数据手册

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30KP102A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.71	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

30KP102A 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414

1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com

30KP SERIES

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-30.0 TO 400 Volts

30000 Watt Peak Pulse Power

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

P-600

• 30000W Peak Pulse Power

capability on 10/1000 µs waveform

• Excellent clamping capability

1.0(25.4) MIN

• Repetition rate (duty cycle):0.05%

• Low incremental surge resistance

• Fast response time: typically less

than 1.0 ps from 0 volts to BV

.360(9.1)

.340(8.6)

DIA

.360(9.1)

.340(8.6)

• Typical Id less than 1µA above 10V

• High temperature soldering guaranteed:

265°C/10 seconds/.375", (9.5mm) lead

length, 5lbs., (2.3kg) tension

.052(1.3)

.048(1.2)

DIA

1.0(25.4) MIN

MECHANICAL DATA

Case:Molded plastic over glass passivated junction

Terminals: Plated Axial leads, solderable per

MIL-STD-750, Method 2026

Dimensions in inches (milimeters)

Polarity: Color band denoted positive end (cathode)

except Bipolar

Mounting Position: Any

Weight: 0.07 ounce, 2.1 gram

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types 30KP30 thru types 30KP400

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

UNITS

Peak Pulse Power Dissipation on 10/1000 µs

P_PPM

Minimum 30000

Watts

waveform (NOTE 1)

Peak Pulse Current of on 10-1000 µs waveform

(NOTE 1)

I_PPM

SEE TABLE 1

8.0

Amps

Watts

Steady State Power Dissipation at Tl=75 °C

Lead Lengths.375", (9.5mm)(NOTE 2)

P_M(AV)

Peak Forward Surge Current, 8.3ms Sine-Wave

Superimposed on Rated Load, (JEDEC Method)

(NOTE 3)

I_FSM

400.0

Amps

°C

Operatings and Storage Temperature Range

NOTES:

T_J, T_STG

-55 to +175

1.Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2.Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3.8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum

Certified RoHS Compliant

UL File # E223026

12 3

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与30KP102A相关器件

型号	品牌	描述	获取价格	数据表
30KP102A-AP-HF	MCC	Trans Voltage Suppressor Diode, 30000W, 102V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格
30KP102A-BP-HF	MCC	暂无描述	获取价格
30KP102-AP	MCC	Trans Voltage Suppressor Diode, 30000W, 102V V(RWM), Unidirectional, 1 Element, Silicon, R	获取价格
30KP102-AP-HF	MCC	Trans Voltage Suppressor Diode	获取价格
30KP102A-T3	WTE	Trans Voltage Suppressor Diode, 30000W, 102V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格
30KP102A-T3-LF	WTE	Trans Voltage Suppressor Diode, 30000W, 102V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格

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