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3.0SMCJ200CA PDF预览

3.0SMCJ200CA

更新时间: 2024-02-04 16:48:55
品牌 Logo 应用领域
EIC 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
4页 53K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

3.0SMCJ200CA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.7
其他特性:LOW INDUCTANCE, UL RECOGNIZED最大击穿电压:282 V
最小击穿电压:220 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
最大非重复峰值反向功率耗散:3000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:200 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

3.0SMCJ200CA 数据手册

 浏览型号3.0SMCJ200CA的Datasheet PDF文件第1页浏览型号3.0SMCJ200CA的Datasheet PDF文件第2页浏览型号3.0SMCJ200CA的Datasheet PDF文件第3页 
Certificate TH97/10561QM  
Certificate TW00/17276EM  
RATING AND CHARACTERISTIC CURVES ( 3.0SMCJ11C - 220CA )  
FIG.1 - PULSE DERATING CURVE  
FIG.2 - TYPICAL JUNCTION CAPACITANCE  
4
10  
120  
Measured at  
Zero Bias  
100  
80  
3
10  
60  
40  
20  
0
2
Measured at  
Stand-off Voltage  
Voltage VWM  
10  
TJ = 25°C  
f = 1.0 MHz  
Vsig = 50 mVP-P  
10  
0
25  
50  
75  
100  
125  
150  
175  
500  
5
10  
100  
Ta, AMBIENT TEMPERATURE, ( °C)  
VRWM, REVERSE STAND-OFF VOLTAGE, (V)  
FIG.3 - PULSE WAVEFORM  
FIG.4 - PEAK PULSE POWER RATING CURVE  
100  
tr = 10μs  
Peak Value  
Ta=25 °C  
Pulse Width (td) is defined  
as that point where the peak  
current decays to 50%  
of IPPM  
100  
50  
0
IPPM  
10  
Half Value - IPPM  
2
10/1000 μs. Waveform  
as defined by R.E.A.  
1.0  
0.1  
td  
0
1.0  
2.0  
3.0  
4.0  
0.1  
1.0  
10  
100  
1ms  
10ms  
t, TIME(ms)  
td, PULSE WIDTH (μs)  
Page 4 of 4  
Rev. 04 : June 10, 2006  

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