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2SJ542-E PDF预览

2SJ542-E

更新时间: 2024-02-13 11:13:01
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 88K
描述
Silicon P Channel MOS FET

2SJ542-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.28
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):18 A最大漏极电流 (ID):18 A
最大漏源导通电阻:0.11 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):72 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ542-E 数据手册

 浏览型号2SJ542-E的Datasheet PDF文件第1页浏览型号2SJ542-E的Datasheet PDF文件第2页浏览型号2SJ542-E的Datasheet PDF文件第4页浏览型号2SJ542-E的Datasheet PDF文件第5页浏览型号2SJ542-E的Datasheet PDF文件第6页浏览型号2SJ542-E的Datasheet PDF文件第7页 
2SJ542  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
1000  
300  
80  
60  
40  
10 µs  
100  
30  
10  
3
1
Operation in  
this area is  
limited by RDS (on)  
20  
0
0.3  
0.1  
Ta = 25°C  
0
50  
100  
150  
200  
0.1 0.3  
1
3
10  
30  
100  
Case Temperature Tc (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
–10 V  
–6 V  
Typical Transfer Characteristics  
–20  
–16  
–12  
–8  
–20  
–16  
–12  
–8  
VDS = –10 V  
Pulse Test  
Pulse Test  
–4 V  
–3.5 V  
–3 V  
–2.5 V  
–4  
–4  
25°C  
Tc = 75°C  
VGS = –2 V  
–25°C  
0
0
0
–2  
–4  
–6  
–8  
–10  
0
–1  
–2  
–3  
–4  
–5  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
–3.0  
1
Pulse Test  
Pulse Test  
0.5  
–2.5  
–2.0  
–1.5  
–1.0  
–0.5  
0
0.2  
0.1  
VGS = –4 V  
ID = –20 A  
0.05  
–10 V  
–10 A  
–5 A  
0.02  
0.01  
0
–4  
–8  
–12  
–16  
–20  
–1  
–2  
–5 –10 –20  
–50 –100  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.4.00 Sep 07, 2005 page 3 of 7  

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