Datasheet > 2SJ522

2SJ522

更新时间： 2024-02-07 12:04:27

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	34K
描述
Ultrahigh-Speed Switching Applications

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技术参数
数据手册

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2SJ522 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	70 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SJ522 数据手册

2SJ522

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

--400

±30

-- 5

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (Pulse)

--20

1.65

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Storage Temperature

Tch

150

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=--10mA, V =0

Unit

min

--400

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Sourse Leakage Current

Cutoff Voltage

(BR)DSS

=--320V, V =0

--1.0

DSS

GSS

=±30V, V =0

±100

(off)

=--10V, I =--1mA

--2.0

1.3

--3.0

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

yfs

(on)

=--10V, I =--2.5A

2.6

=--2.5A, V =--10V

D GS

1.5

1500

240

2.0

Ω

Ciss

Coss

Crss

=--20V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

t (on)

See specified Test Circuit.

Rise Time

Turn-OFF Delay Time

Fall Time

t (off)

340

150

Diode Forward Voltage

Marking : J522

I =--5A, V =0

--1.5

*(Note) Be careful in handling the 2SJ522 because it has no protection diode between gate and source.

Switching Time Test Circuit

= --200V

= --2.5A

--10V

R =80Ω

OUT

PW=10µs

D.C.≤1%

P. G

50Ω

2SJ522

No.7127-2/4

123 4

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