Datasheet > 2SD965R

2SD965R

更新时间： 2024-09-27 23:20:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	66K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 5A I(C) \| TO-92

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中文翻译

获取价格

数据手册

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2SD965R 数据手册

Transistor

2SD0965 (2SD965)

Silicon NPN epitaxial planer type

For low-frequency power amplification

For stroboscope

Unit: mm

4.0 0.2

5.0 0.2

Features

Low collector to emitter saturation voltage V_CE(sat)

Satisfactory operation performances at high efficiency with the

low-voltage power supply.

Absolute Maximum Ratings (Ta=25˚C)

0.45–⁺0⁰.^.1²

0.45⁺^–0⁰^.^.¹²

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.27

1 2 3

1:Emitter

2:Collector

3:Base

I_C

2.54 0.15

JEDEC:TO–92

EIAJ:SC–43A

Collector power dissipation

Junction temperature

Storage temperature

P_C

0.75

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

V_CB= 10V, I_E= 0

µA

Collector cutoff current

I_CEO

V_CE= 10V, I_B= 0

1.0

Emitter cutoff current

I_EBO

V_EB= 7V, I_C= 0

0.1

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 2V, I_C= 0.5A^*2

V_CE= 2V, I_C= 2A^*2

I_C= 3A, I_B= 0.1A^*2

V_CB= 6V, I_E= –50mA, f = 200MHz

V_CB= 20V, I_E= 0, f = 1MHz

230

150

600

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

MHz

Transition frequency

f_T

150

Collector output capacitance

C_ob

^*2Pulse measurement

FE1

Rank classification

Rank

h_FE1

230 ~ 380

340 ~ 600

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

中文翻译

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