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2SD882-Q PDF预览

2SD882-Q

更新时间: 2022-10-12 13:49:08
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科信 - KEXIN /
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描述
NPN Transistors

2SD882-Q 数据手册

  
SMD Type  
Transistors  
NPN  
Tr  
ansistors  
2SD882  
1.70 0.1  
Features  
Excellent hFE linearity and high hFE  
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current to Continuous  
Collector Dissipation  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
40  
30  
V
6
3
V
A
Pc  
0.5  
W
Junction Temperature  
TJ  
150  
Storage Temperature  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditions  
Ic=100uA ,IE=0  
Min  
40  
30  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
VCBO  
VCEO  
VEBO  
ICBO  
ICEO  
IEBO  
IC= 10 mA , IB=0  
IE= 100 uA ,IC=0  
VCB=40 V , IE=0  
VCE=30 V , IB=0  
VEB=6V , IC=0  
V
V
1
10  
1
uA  
uA  
uA  
Collector cut-off current  
Emitter cut-off current  
VCE= 2V, IC= 1A  
VCE=2V, IC= 100mA  
IC=2A, IB= 0.2A  
IC=2A, IB= 0.2A  
60  
32  
400  
DC current gain  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
f T  
0.5  
1.5  
V
V
VCE=5 V, IC=0.1mA,f = 10MHz  
50  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SD882-R  
60-120  
882R  
2SD882-Q  
2SD882-P  
160-320  
882P  
2SD882-E  
200-400  
882E  
100-200  
882Q  
1
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