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2SD882S

更新时间: 2023-12-06 20:03:49
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
1页 102K
描述
小信号晶体管

2SD882S 数据手册

  
2SD882S  
NPN Silicon Epitaxial Planar Transistor  
for the output stage of 0.75 W audio, voltage  
regulator, and relay driver.  
The transistor is subdivided into three groups Q, P  
and E, according to its DC current gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
40  
V
V
30  
5
V
3
750  
A
Power Dissipation  
Ptot  
mW  
Junction Temperature  
Storage Temperature Range  
Tj  
150  
Tstg  
- 55 to + 150  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 2 V, IC = 1 A  
Current Gain Group  
Q
P
E
hFE  
hFE  
hFE  
hFE  
100  
160  
200  
30  
-
-
-
-
200  
320  
400  
-
-
-
-
-
at VCE = 2 V, IC = 20 mA  
Collector Base Cutoff Current  
at VCB = 30 V  
Emitter Base Cutoff Current  
at VEB = 3 V  
Collector Base Breakdown Voltage  
at IC = 100 µA  
Collector Emitter Breakdown Voltage  
at IC = 1 mA  
Emitter Base Breakdown Voltage  
at IE = 10 µA  
Collector Emitter Saturation Voltage  
at IC = 2 A, IB = 200 mA  
Base Emitter Saturation Voltage  
at IC = 2 A, IB = 200 mA  
Transition Frequency  
ICBO  
IEBO  
-
-
-
-
1
1
-
µA  
µA  
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
VBE(sat)  
fT  
40  
30  
5
-
-
-
-
V
-
-
V
-
0.5  
2
-
V
-
-
V
-
90  
45  
MHz  
pF  
at VCE = 5 V, IC = 0.1 A, f = 100 MHz  
Collector Output Capacitance  
at VCB = 10 V, f = 1 MHz  
Cob  
-
-
®
Dated22/02/2016 CL Rev: 02  

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