Datasheet > 2SD780

2SD780

更新时间： 2024-09-30 06:22:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	38K
描述
NPN Silicon Epitaxia

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中文翻译

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数据手册

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2SD780 数据手册

SMD Type

TransistIoCrs

NPN Silicon Epitaxia

2SD780

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Micro package.

High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

5.0

300

Total power dissipation at 25

ambient temperature

P^T

200

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

Testconditons

Min

Typ

Max

Unit

I^CBO

I^EBO

h^FE

VCB = 50 V, IE = 0

100

400

700

0.6

VEB = 5.0 V, IC = 0

VCE = 1.0 V, IC = 50 mA

VCE = 6.0 V, IC = 10 mA

110

600

200

645

0.15

7.0

Base to emitter voltage *

Collector saturation voltage *

Output capacitance

V^BE

V^CE(sat)IC = 300 mA, IB = 30 mA

C^ob

f^T

VCB = 6.0 V, IE = 0 , f = 1.0 MHz

VCE = 6.0 V, IE = -10 mA

Gain bandwidth product

140

MHz

* Pulsed: PW

350 ìs, duty cycle

hFE Classification

Marking

hFE

DW1

110 180

DW2

DW3

170 270

DW4

DW5

250 400

135 220

200 320

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