是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.24 |
最大集电极电流 (IC): | 0.7 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 180 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN SILVER COPPER |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD186 | ETC |
获取价格 |
2SD186 |
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2SD1860 | ROHM |
获取价格 |
Transistor, |
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2SD1860P | ROHM |
获取价格 |
Transistor |
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2SD1860R | ROHM |
获取价格 |
Transistor |
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2SD1860TV2 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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2SD1860TV2/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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2SD1860TV2/PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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2SD1860TV2/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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2SD1860TV2/R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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2SD1860TV2P | ROHM |
获取价格 |
500mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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