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2SD1616AU PDF预览

2SD1616AU

更新时间: 2023-12-06 20:10:01
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 848K
描述
小信号晶体管

2SD1616AU 数据手册

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2SD1616AU  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
hFE  
Min.  
Max.  
Unit  
DC Current Gain  
at VCE = 2 V, IC = 100 mA  
Current Gain Group  
Y
G
L
135  
200  
300  
81  
270  
400  
600  
-
-
-
-
-
at VCE = 2 V, IC = 1 A  
Collector Base Cutoff Current  
at VCB = 120 V  
Emitter Base Cutoff Current  
at VEB = 6 V  
Collector Base Breakdown Voltage  
at IC = 100 μA  
Collector Emitter Breakdown Voltage  
at IC = 10 mA  
Emitter Base Breakdown Voltage  
at IE= 100 μA  
Collector Emitter Saturation Voltage  
at IC = 1 A, IB = 50 mA  
Base Emitter Saturation Voltage  
at IC = 1 A, IB = 50 mA  
ICBO  
IEBO  
-
-
100  
100  
-
nA  
nA  
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
VBE(sat)  
VBE(on)  
fT  
120  
60  
6
-
V
-
V
mV  
V
-
300  
1.2  
700  
-
-
Base Emitter Turn-On Voltage  
at VCE = 2 V, IC = 50 mA  
Gain Bandwidth Product  
at VCE = 2 V, IC = 100 mA  
Output Capacitance  
600  
100  
-
mV  
MHz  
pF  
Cob  
19  
at VCB = 10 V, f = 1 MHz  
®
2 / 5  
Date: 17/04/2023 Rev: 02  

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