生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.48 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 60 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 2000 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SD1470ATTR | HITACHI | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3 |
获取价格 |
|
2SD1470ATTR-E | RENESAS | Silicon NPN Epitaxial, Darlington |
获取价格 |
|
2SD1470ATUL | RENESAS | 1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, UPAK-3 |
获取价格 |
|
2SD1470ATUL | HITACHI | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3 |
获取价格 |
|
2SD1470ATUR | HITACHI | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3 |
获取价格 |
|
2SD1471 | RENESAS | Silicon NPN Planar, Darlington |
获取价格 |