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2SD1268Q PDF预览

2SD1268Q

更新时间: 2024-01-23 22:04:19
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 52K
描述
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186

2SD1268Q 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SD1268Q 数据手册

 浏览型号2SD1268Q的Datasheet PDF文件第2页浏览型号2SD1268Q的Datasheet PDF文件第3页 
Power Transistors  
2SD1268  
Silicon NPN epitaxial planar type  
For power switching  
Unit: mm  
Complementary to 2SB0943 (2SB943)  
10.0±0.2  
5.5±0.2  
4.2±0.2  
2.7±0.2  
Features  
Low collector to emitter saturation voltage VCE(sat)  
φ3.1±0.1  
Satisfactory linearity of foward current transfer ratio hFE  
Large collector current IC  
Full-pack package which can be installed to the heat sink with  
one screw  
1.3±0.2  
1.4±0.1  
+0.2  
–0.1  
Absolute Maximum Ratings (T =25˚C)  
0.5  
C
0.8±0.1  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
2.54±0.25  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
130  
80  
V
5.08±0.5  
1
2
3
7
V
1:Base  
2:Collector  
3:Emitter  
6
A
IC  
3
A
TO–220 Full Pack Package(a)  
Collector power TC=25°C  
30  
PC  
W
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
10  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
VCB = 100V, IE = 0  
IEBO  
VCEO  
hFE1  
VEB = 5V, IC = 0  
IC = 10mA, IB = 0  
50  
Collector to emitter voltage  
80  
45  
60  
V
CE = 2V, IC = 0.1A  
Forward current transfer ratio  
*
hFE2  
VCE = 2V, IC = 0.5A  
260  
0.5  
1.5  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 2A, IB = 0.1A  
V
V
IC = 2A, IB = 0.1A  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = 10V, IC = 0.5A, f = 10MHz  
30  
0.5  
MHz  
µs  
IC = 0.5A, IB1 = 50mA, IB2 = –50mA,  
VCC = 50V  
2.5  
µs  
0.15  
µs  
*hFE2 Rank classification  
Rank  
hFE2  
R
Q
P
60 to 120  
90 to 180  
130 to 260  
Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.  
Note) The part number in the parenthesis shows conventional part number.  
1

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