Power Transistors
2SD1268
Silicon NPN epitaxial planar type
For power switching
Unit: mm
Complementary to 2SB0943 (2SB943)
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
Features
■
●
Low collector to emitter saturation voltage VCE(sat)
φ3.1±0.1
●
Satisfactory linearity of foward current transfer ratio hFE
●
Large collector current IC
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
+0.2
–0.1
Absolute Maximum Ratings (T =25˚C)
0.5
■
C
0.8±0.1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
2.54±0.25
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
130
80
V
5.08±0.5
1
2
3
7
V
1:Base
2:Collector
3:Emitter
6
A
IC
3
A
TO–220 Full Pack Package(a)
Collector power TC=25°C
30
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
10
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 100V, IE = 0
IEBO
VCEO
hFE1
VEB = 5V, IC = 0
IC = 10mA, IB = 0
50
Collector to emitter voltage
80
45
60
V
CE = 2V, IC = 0.1A
Forward current transfer ratio
*
hFE2
VCE = 2V, IC = 0.5A
260
0.5
1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 0.1A
V
V
IC = 2A, IB = 0.1A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 10MHz
30
0.5
MHz
µs
IC = 0.5A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V
2.5
µs
0.15
µs
*hFE2 Rank classification
Rank
hFE2
R
Q
P
60 to 120
90 to 180
130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.
Note) The part number in the parenthesis shows conventional part number.
1