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2SC4835GQ PDF预览

2SC4835GQ

更新时间: 2024-02-10 22:02:22
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 40K
描述
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SC4835GQ 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.08 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):6000 MHz
Base Number Matches:1

2SC4835GQ 数据手册

 浏览型号2SC4835GQ的Datasheet PDF文件第2页 
Transistor  
2SC4835  
Silicon NPN epitaxial planer type  
For UHF band low-noise amplification  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
Low noise figure NF.  
1
High gain.  
High transition frequency fT.  
3
S-Mini type package, allowing downsizing of the equipment and  
2
automatic insertion through the tape packing and the magazine  
packing.  
Absolute Maximum Ratings (Ta=25˚C)  
0.2±0.1  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
15  
10  
V
1:Base  
2:Emitter  
3:Collector  
2
80  
V
EIAJ:SC–70  
S–Mini Type Package  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Marking symbol : 3M  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
VCB = 10V, IE = 0  
1
1
IEBO  
VCBO  
VCEO  
hFE  
VEB = 2V, IC = 0  
Collector to base voltage  
Collector to emitter voltage  
Forward current transfer ratio  
Transition frequency  
IC = 10µA, IE = 0  
15  
10  
50  
5
IC = 100µA, IB = 0  
V
VCE = 8V, IC = 20mA*  
150  
6
200  
1.2  
fT  
VCE = 8V, IC = 15mA, f = 800MHz  
VCB = 10V, IE = 0, f = 1MHz  
VCE = 8V, IC = 15mA, f = 800MHz  
VCE = 8V, IC = 15mA, f = 800MHz  
VCE = 8V, IC = 7mA, f = 800MHz  
GHz  
pF  
Collector output capacitance  
Foward transfer gain  
Cob  
0.7  
14  
15  
1.3  
2
| S21e  
|
11  
dB  
Maximum unilateral power gain  
Noise figure  
GUM  
NF  
dB  
2
dB  
* Pulse measurement  
1

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