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2SC4137/V PDF预览

2SC4137/V

更新时间: 2024-02-10 20:25:16
品牌 Logo 应用领域
罗姆 - ROHM 晶体开关射频开关放大器小信号双极晶体管局域网
页数 文件大小 规格书
3页 157K
描述
100mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126FP, TO-126FP, 3 PIN

2SC4137/V 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SIP包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.84外壳连接:ISOLATED
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):1200
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):400 MHzBase Number Matches:1

2SC4137/V 数据手册

 浏览型号2SC4137/V的Datasheet PDF文件第2页浏览型号2SC4137/V的Datasheet PDF文件第3页 
High frequency amplifier transistor,  
RF switching (6V, 50mA)  
2SC4774 / 2SC4713K  
Features  
Dimensions (Unit : mm)  
1) Very low output-on resistance (Ron).  
2) Low capacitance.  
2SC4774  
2.0  
0.9  
0.7  
0.2  
0.3  
( )  
3
Absolute maximum ratings (Ta=25C)  
(
)
( )  
1
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
Unit  
V
2
VCBO  
VCEO  
VEBO  
12  
0.650.65  
1.3  
0.15  
6
V
3
50  
V
Each lead has same dimensions  
I
C
mA  
W
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
0.2  
ROHM : UMT3  
EIAJ : SC-70  
(1) Emitter  
(2) Base  
(3) Collector  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
2SC4713K  
Packaging specifications and hFE  
2.9  
1.1  
0.8  
0.4  
2SC4774  
2SC4713K  
Type  
Package  
UMT3  
S
SMT3  
S
( )  
3
hFE  
Marking  
Code  
BM  
BM  
T106  
3000  
T146  
3000  
(
)
( )  
1
2
Basic ordering unit (pieces)  
Denotes hFE  
0.95 0.95  
1.9  
0.15  
Each lead has same dimensions  
ROHM : SMT3  
EIAJ : SC-59  
(1) Emitter  
(2) Base  
(3) Collector  
Electrical characteristics (Ta=25C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
12  
6
800  
1
0.5  
0.5  
0.3  
560  
V
V
I
I
I
C
=10μA  
=1mA  
C
3
V
E
=10μA  
CB=10V  
EB=2V  
I
CBO  
EBO  
CE(sat)  
180  
300  
μA  
μA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C
/I  
B
=10mA/1mA  
=5V/5mA  
CE=5V, I = −10mA, f=200MHz  
CB=10V, I =0A, f=1MHz  
=3mA, V =100mVrms, f=500kHz  
h
FE  
T
V
V
V
CE/IC  
Transition frequency  
f
MHz  
pF  
Ω
E
Output capacitance  
Cob  
Ron  
1.7  
E
Output-on resistance  
2
I
B
I
This product might cause chip aging and breakdown under the large electrified environment.  
Please consider to design ESD protection circuit.  
www.rohm.com  
2009.12 - Rev.C  
1/2  
c
2009 ROHM Co., Ltd. All rights reserved.  

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