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2SC4111 PDF预览

2SC4111

更新时间: 2024-02-09 10:55:43
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管
页数 文件大小 规格书
3页 58K
描述
Silicon NPN triple diffusion planar type

2SC4111 技术参数

生命周期:Obsolete零件包装代码:TO-3L
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.74Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:700 V配置:SINGLE
最小直流电流增益 (hFE):3JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):3.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
Base Number Matches:1

2SC4111 数据手册

 浏览型号2SC4111的Datasheet PDF文件第2页浏览型号2SC4111的Datasheet PDF文件第3页 
Power Transistors  
2SC4111  
Silicon NPN triple diffusion planar type  
For horizontal deflection output  
Unit: mm  
φ 3.3±0.2  
5.0±0.3  
20.0±0.5  
3.0  
Features  
High-speed switching  
High collector to base voltage VCBO  
Wide area of safe operation (ASO)  
1.5  
Satisfactory linearity of foward current transfer ratio hFE  
1.5  
2.0±0.3  
Absolute Maximum Ratings (T =25˚C)  
C
2.7±0.3  
3.0±0.3  
Parameter  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
1.0±0.2  
0.6±0.2  
Collector to base voltage  
1500  
5.45±0.3  
1500  
V
Collector to emitter voltage  
10.9±0.5  
700  
V
Emitter to base voltage  
Peak collector current  
Collector current  
7
V
1:Base  
2:Collector  
3:Emitter  
22  
10  
A
1
2
3
IC  
A
TOP–3L Package  
Base current  
IB  
3.5  
A
Collector power TC=25°C  
150  
PC  
W
dissipation  
Ta=25°C  
3.5  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
10  
Unit  
µA  
mA  
V
VCB = 750V, IE = 0  
Collector cutoff current  
Emitter to base voltage  
VCB = 1500V, IE = 0  
IC = 1mA, IB = 0  
1
VEBO  
hFE1  
hFE2  
7
5
3
VCE = 5V, IC = 1A  
Forward current transfer ratio  
VCE = 5V, IC = 7A  
8
5
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 7A, IB = 2.5A  
V
V
IC = 7A, IB = 2.5A  
1.5  
Transition frequency  
Storage time  
fT  
tstg  
tf  
VCE = 10V, IC = 1A, f = 0.5MHz  
IC = 6A, Lleak = 5µH,  
IB1 = 1.7A, IB2 = –1.7A  
2
MHz  
µs  
12  
Fall time  
0.6  
µs  
1

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