Datasheet > 2SC4115R

2SC4115R

更新时间： 2024-09-21 20:01:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	967K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SC4115R 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SC4115R 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89 Plastic-Encapsulate Transistors

2SC4115 TRANSISTOR (NPN)

SOT-89

FEATURES

1. BASE

Low V_CE(sat).V_CE(sat)= 0.2V (Typ.)(I_C/ I_B= 2A / 0.1A)

Excellent current gain characteristics.

Complements to 2SA1585

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature

500

150

-55-150

T_J

℃

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 50μA, I_E=0

I_C=1mA , I_B=0

I_E=50μA, I_C=0

V_CB=30V, I_E=0

V_EB= 5V, I_C=0

V_CE=2V, I_C= 0.1A

I_C= 2A, I_B=0.1A

0.1

560

0.5

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

120

200

Collector-emitter saturation voltage*

V_CEsat

f_T

V_CE=2V, I_C=0.5 A

F=100MHz

Transition frequency

*pulse test

290

MHz

CLASSIFICATION OF h_FE

Rank

Range

120-270

4115Q

180-390

4115R

270-560

4115S

marking

中文翻译

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