生命周期: | Transferred | 零件包装代码: | SC-59 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.27 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 160 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3360N17-T2B-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,200V V(BR)CEO,100MA I(C),TO-236VAR | |
2SC3360-T1B-A | RENESAS |
获取价格 |
Small Signal Bipolar Transistors, MM, / | |
2SC3360-T2B-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,200V V(BR)CEO,100MA I(C),TO-236VAR | |
2SC3360-T2B-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,200V V(BR)CEO,100MA I(C),TO-236VAR | |
2SC3361 | SANYO |
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High-Speed Switching Applications | |
2SC3361 | KEXIN |
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NPN Epitaxial Planar Silicon Transistors | |
2SC3361 | TYSEMI |
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Fast switching speed. High breakdown voltage.Collector-base voltage VCBO 60 V | |
2SC3361_15 | KEXIN |
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NPN Transistors | |
2SC3361-4 | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23 | |
2SC3361-5 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23 |