Datasheet > 2SC2959L

2SC2959L

更新时间： 2024-09-29 23:20:15

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BJT

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中文翻译

获取价格

数据手册

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2SC2959L 数据手册

DATA SHEET

SILICON TRANSISTORS

2SC2958, 2959

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

Ideal for use of high voltage current such as TV vertical

deflection (drive and output), audio output, pin cushion

correction

•

Complementary transistor with 2SA1221 and 2SA1222

V^CEO= 140 V: 2SA1221/2SC2958

V^CEO= 160 V: 2SA1222/2SC2959

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

160

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Total power dissipation

Junction temperature

Storage temperature

140/160

5.0

500

1.0

°C

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 100 V, I^E= 0

MIN.

TYP.

MAX.

200

400

0.7

Unit

I^EBO

V^EB= 5.0 V, I^C= 0

h^FE**

V^BE**

V^CE(sat)**

V^BE(sat)**

C^ob

V^CE= 2.0 V, I^C= 100 mA

V^CE= 5.0 V, I^C= 20 mA

I^C= 1.0 A, I^B= 0.2 A

100

0.6

150

0.64

0.32

1.1

DC base voltage

Collector saturation voltage

Base saturation voltage

Output capacitance

Gain bandwidth product

0.7

1.3

V^CB= 10 V, I^E= 0, f = 1.0 MHz

MHz

V^CE= 10 V, I^E= −20 mA

f^T

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16150EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

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与2SC2959L相关器件

型号	品牌	获取价格	描述	数据表
2SC2959-L	RENESAS	获取价格	500mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2959-L	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
2SC2959L-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,160V V(BR)CEO,500MA I(C),SPAKVAR
2SC2959L-T	RENESAS	获取价格	2SC2959L-T
2SC2959L-T-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,160V V(BR)CEO,500MA I(C),SPAKVAR
2SC2959L-T-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,160V V(BR)CEO,500MA I(C),SPAKVAR
2SC2959M	ETC	获取价格	BJT
2SC2959-M	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
2SC2959-M	RENESAS	获取价格	500mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2959M-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,160V V(BR)CEO,500MA I(C),SPAKVAR