2SC2532
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2532
Audio Frequency Amplifier Applications
Unit: mm
Driver Stage for LED Lamp Applications
Temperature Compensation Applications
·
High h : h
FE FE
(1) = 5000 (min) (IC = 10 mA)
(2) = 10000 (min) (IC = 100 mA)
h
FE
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
40
40
V
V
CBO
CEO
EBO
10
V
I
300
mA
mA
mW
°C
°C
C
Base current
I
60
B
Collector power dissipation
Junction temperature
Storage temperature range
P
150
C
JEDEC
JEITA
TO-236MOD
T
125
j
SC-59
T
-55~125
stg
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
V
V
V
V
= 40 V, I = 0
¾
¾
¾
¾
0.1
0.1
¾
mA
mA
CBO
CB
EB
CE
CE
E
I
= 8 V, I = 0
C
EBO
h
FE
h
FE
(1)
(2)
= 5 V, I = 10 mA
5000
10000
¾
¾
C
DC current gain
= 2 V, I = 100 mA
¾
¾
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= 300 mA, I = 0.3 mA
0.9
1.25
1.3
1.6
V
V
CE (sat)
C
B
V
V
= 2 V, I = 100 mA
¾
BE
CB
C
Marking
Equivalent Circuit
1
2003-03-27