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2SB1066M/PR PDF预览

2SB1066M/PR

更新时间: 2024-01-19 04:18:22
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
2页 101K
描述
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

2SB1066M/PR 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.84
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):82
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):70 MHzVCEsat-Max:1 V
Base Number Matches:1

2SB1066M/PR 数据手册

 浏览型号2SB1066M/PR的Datasheet PDF文件第2页 

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