Transistors
2SB0621 (2SB621), 2SB0621A (2SB621A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Unit: mm
Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A)
5.0 0.2
4.0 0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High transition frequency fT
0.7 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−30
Unit
2SB0621
2SB0621A
2SB0621
2SB0621A
VCBO
V
Collector-base voltage
(Emitter open)
+0.15
+0.15
0.45
0.45
–0.1
–0.1
+0.6
+0.6
2.5
–0.2
−60
2.5
–0.2
VCEO
−25
V
Collector-emitter voltage
(Base open)
1: Emitter
1
2 3
−50
2: Collector
3: Base
EIAJ: SC-43A
Emitter-base voltage (Collector open) VEBO
−5
V
A
Collector current
IC
ICP
PC
Tj
−1
TO-92-B1 Package
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
−1.5
A
750
mW
°C
°C
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
Conditions
Min
−30
−60
−25
−50
−5
Typ
Max
Unit
2SB0621
2SB0621A
2SB0621
2SB0621A
VCBO
IC = −10 µA, IE = 0
V
Collector-base voltage
(Emitter open)
VCEO
IC = −2 mA, IB = 0
V
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
VEBO
ICBO
IE = −10 µA, IC = 0
V
µA
VCB = −20 V, IE = 0
− 0.1
*
hFE1
VCE = −10 V, IC = −500 mA
VCE = −5 V, IC = −1 A
85
50
340
hFE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = −500 mA, IB = −50 mA
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.4
− 0.85 −1.2
200
V
V
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
20
30
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJC00044CED
1