Datasheet > 2SAR502U3HZG

2SAR502U3HZG

更新时间： 2023-09-03 20:25:02

品牌	Logo	应用领域
罗姆 - ROHM		晶体管
页数	文件大小	规格书
12页	1479K
描述
适用于低频放大的低VCE(sat)晶体管。

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2SAR502U3HZG 数据手册

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2SAR502U3HZG

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Datasheet

llAbsolute maximum ratings (T_a= 25°C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Values

-30

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

-30

-6

-0.5

Collector current

I_CP

-1

I_B

Base current

-0.15

200

P_D

Power dissipation

℃

T_j

Junction temperature

Range of storage temperature

150

T_stg

-55 to +150

llElectrical characteristics (T_a= 25°C)

Values

Parameter

Symbol

BV_CBO

BV_CEO

Conditions

I = -100μA

Unit

Min.

-30

Typ.

Max.

Collector-base breakdown

voltage

Collector-emitter breakdown

voltage

I = -1mA

-30

BV_EBO

I_CBO

I = -100μA

Emitter-base breakdown voltage

Collector cut-off current

-6

= -25V

= -4V

-200

-400

500

I_EBO

Emitter cut-off current

-150

Collector-emitter saturation voltage

I = -200mA, I = -10mA

CE(sat)

= -2V, I = -100mA

DC current gain

200

= -10V, I = 100mA,

Transition frequency

520

MHz

f = 100MHz

= -10V, I = 0A,

C_ob

Output capacitance

f = 1MHz

*1 Limited by power dissipation.

*2 Pw=10ms, Single pulse.

*3 Each terminal mounted on a reference land.

*4 Pulsed

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www.rohm.com

2/6

20180720 - Rev.002

123 4 5 6 7...12

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