Datasheet > 2SAR502E3

2SAR502E3

更新时间： 2024-03-03 10:10:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
10页	2578K
描述
2SAR502E3 is a low V_CE(sat) transistor for low frequency amplifier.

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2SAR502E3 数据手册

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2SAR502E3 / 2SAR502U3

Datasheet

llAbsolute maximum ratings (T_a= 25°C)

Parameter

Symbol

V_CBO

Values

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

-30

V_CEO

V_EBO

-6

I_C

-0.5

Collector current

Base current

I_CP

-1

I_B

-0.15

150

2SAR502E3

2SAR502U3

P_D

Power dissipation

200

T_j

Junction temperature

150

℃

T_stg

Range of storage temperature

-55 to +150

llElectrical characteristics (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

I = -100μA

Unit

Min.

-30

Max.

Collector-base breakdown

voltage

BV_CBO

BV_CEO

Collector-emitter breakdown

voltage

I = -1mA

-30

BV_EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I = -100μA

-6

= -25V

= -4V

-200

-400

500

I_EBO

-150

Collector-emitter saturation voltage

DC current gain

I = -200mA, I = -10mA

CE(sat)

= -2V, I = -100mA

200

= -10V, I = 100mA,

Transition frequency

520

MHz

f = 100MHz

= 10V, I = 0A,

C_ob

Output capacitance

f = 1MHz

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*1 Limited by power dissipation.

*2 Pw=10ms, Single pulse.

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*3 Each terminal mounted on a reference land.

*4 Pulsed

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www.rohm.com

2/7

20231017 - Rev.004

123 4 5 6 7...10

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