Datasheet > 2SA684G-X-T9N-B

2SA684G-X-T9N-B

更新时间： 2022-09-16 17:26:28

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
5页	258K
描述
PNP SILICON TRANSISTOR

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数据手册

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2SA684G-X-T9N-B 数据手册

2SA684

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

Collector to Emitter Voltage vs.

Base to Emitter Resistance

Collector to Emitter Current vs.

Ambient Temperature

10⁴

-120

I_C=-10mA

Ta=25℃

V_CE=-10V

-100

-80

10³

10²

-60

-40

-20

10 30

0.1 0.3

100

20 40 60 80 100 120 140 160

Base to Emitter Resistance, R_BE(KΩ)

Ambient Temperature, Ta (℃)

Area Of Safe Operation (ASO)

-10

Single Pulse

Ta=25℃

-3

-1

I_CP

t=10ms

-0.3

t=1s

-0.1

-0.03

-0.01

-0.003

-0.001

-1 -3 -10 -30

-0.1 -0.3

-100

Collector To Emitter Voltage, V_CE(V)

UNISONIC TECHNOLOGIES CO., LTD

4 of 5

QW-R211-006.C

www.unisonic.com.tw

1 2 345

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