Datasheet > 2SA684G-X-T9N-B

2SA684G-X-T9N-B

更新时间： 2022-09-16 17:26:28

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
5页	258K
描述
PNP SILICON TRANSISTOR

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2SA684G-X-T9N-B 数据手册

2SA684

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS ( Ta=25℃,unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CP

RATINGS

-60

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Collector Current

Collector Current (DC)

-50

-5

-1.5

I_C

-1

SOT-89

500

℃

Collector Dissipation

P_C

TO-92NL

1000

+150

-55 ~ +150

Junction Temperature

Storage Temperature

T_J

T_STG

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

BV_CBOI_C=-10μA, I_E=0

BV_CEOI_C=-2mA, I_B=0

BV_EBOI_E=-10μA, I_C=0

-60

-50

-5

I_CBO

h_FE1

h_FE2

V_CB=-20V, I_E=0

-0.1

340

μA

V_CE=-10V, I_C=-500mA

V_CE=-5V, I_C=-1A

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

V_CE(SAT)I_C=-0.5A, I_B=-50mA

V_BE(SAT)I_C=-0.5A, I_B=-50mA

-0.2

-0.4

-0.85 -1.2

200

f_T

V_CE=-10V, I_B=50mA, f=200MHz

V_CB=-10V, I_E=0, f=1MHz

MHz

C_ob

CLASSIFICATION OF h_FE1

RANK

120-240

RANGE

85-170

170-340

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R211-006.C

www.unisonic.com.tw

123 4 5

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