2SA1374DRF

更新时间： 2024-02-15 01:45:13

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数据手册

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2SA1374DRF 数据手册

2SA1374

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–55

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–55

–5

–100

–30

°C

Base current

I_B

Collector power dissipation

Junction temperature

Storage temperature

P_C

300

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V_(BR)CBO

–55

–5

—

I_C= –10 µA, I_E= 0

Collector to emitter breakdown V_(BR)CEO

voltage

—

I_C= –1 mA, R_BE= ∞

I_E= –10 µA, I_C= 0

Emitter to base breakdown

voltage

V_(BR)EBO

—

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Base to emitter voltage

I_CBO

I_EBO

h_FE*¹

V_BE

—

–0.1

µA

V_CB= –18 V, I_E= 0

—

–0.05 µA

V_EB= –2 V, I_E= 0

160

—

500

V_CE= –12 V, I_C= –2 mA

I_C= –10 mA, I_B= –1 mA

–0.66 –0.75

Collector to emitter saturation V_CE(sat)

voltage

—

–0.1

–0.5

Gain bandwidth product

f_T

—

250

2.5

—

MHz

V_CE= –12 V, I_C= –2 mA

Collector output capacitance

Cob

V_CB= –10 V, I_E= 0, f = 1 MHz

Note: 1. The 2SA1374 is grouped by h_FEas follows.

160 to 320

250 to 500

See characteristic curves of 2SA836.

123 4 5

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2SA1374RF	HITACHI	暂无描述	获取价格
2SA1374RR	RENESAS	100mA, 55V, PNP, Si, SMALL SIGNAL TRANSISTOR	获取价格
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