2SA1069-L

更新时间： 2024-02-27 00:01:33

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瑞萨 - RENESAS		晶体开关晶体管
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2SA1069-L 数据手册

DATA SHEET

SILICON POWER TRANSISTORS

2SA1069, 1069A

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

ORDERING INFORMATION

The 2SA1069/1069A are the mold power transistors developed for <R>

high-speed switching, and is ideal for use as a driver in devices such

as switching regulators, DC/DC converters, and high-frequency power

amplifiers.

Part No.

2SA1069

Package

TO-220AB

(MP-25)

2SA1069A

2SA1069-Z

2SA1069A-Z

TO-220SMD

(MP-25Z)

FEATURES

• Low collector saturation voltage

• Fast switching speed

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter

Symbol

VCBO

Conditions

Ratings

−80

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

VCEO

−60/−80

−12

VEBO

IC(DC)

−5.0

IC(pulse)

PW ≤ 300 μs,

−10

duty cycle ≤ 10%

<R>

(TO-220SMD)

Base current (DC)

IB(DC)

−2.5

Total power dissipation

TC = 25°C

T^A= 25°C

°C

1.5

Junction temperature

Storage temperature

150

Tstg

−55 to +150

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14855EJ3V1DS00 (3rd edition)

Date Published January 2010 N

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an ‘‘<R>"

in the PDF file and specifying it in the ‘‘Find what:’’ field.

2002

1 234 5 6 7 8

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2SA1069L-S	RENESAS	暂无描述	获取价格
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